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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39112


    Title: Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures
    Authors: Lin,TY;Chen,HM;Tsai,MS;Chen,YF;Fang,FF;Lin,CF;Chi,GC
    Contributors: 物理研究所
    Keywords: N-TYPE GAN;EFFECTIVE-MASS;CYCLOTRON-RESONANCE;QUANTUM-WELLS;GALGAN INTERFACE;BAND-OFFSET;DEPENDENCE;HETEROJUNCTION;RELAXATION;DIODES
    Date: 1998
    Issue Date: 2010-07-08 14:05:18 (UTC+8)
    Publisher: 中央大學
    Abstract: We present results of electrical and optical measurements in an AlxGa1-xN/GaN heterostructure. The presence of a two-dimensional electron gas at the high-quality AlxGa1-xN/GaN heterointerface is confirmed by Shubnikov-de Haas measurement, which shows well-resolved magnetoresistance oscillations starting in fields below 3 T at 1.3 K. From the temperature dependence of the oscillation amplitude, the obtained effective mass (0.24+/-0.02)m(0) is in excellent agreement with the value of cyclotron resonance measurements in two-dimensional (2D) systems, but larger than the values of theoretical and experimental results in GaN bulk films. We point out that the effective-mass enhancement in 2D systems is due to the effects of band nonparabolicity and wave-function penetration into the barrier material. The results of photoconductivity measurements reveal that persistent photoconductivity (PPC) does exist in the AlxGa1-xN/GaN heterostructure, and that the PPC behavior of AlxGa1-xN/GaN heterojunction is quite different from that of the GaN epitaxial thin films. A possible mechanism is presented to interpret the observed PPC effect. [S0163-1829(98)07843-7].
    Relation: PHYSICAL REVIEW B
    Appears in Collections:[物理研究所] 期刊論文

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