Growth and characterizations of GaN on SiC substrates with buffer layers

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题名:	Growth and characterizations of GaN on SiC substrates with buffer layers
作者:	Lin,CF;Cheng,HC;Chi,GC;Feng,MS;Guo,JD;Hong,JMH;Chen,CY
贡献者:	物理研究所
关键词:	2-DIMENSIONAL ELECTRON-GAS;CHEMICAL-VAPOR-DEPOSITION;PHASE EPITAXY;DEPENDENCE;PHOTOLUMINESCENCE
日期:	1997
上传时间:	2010-07-08 14:05:54 (UTC+8)
出版者:	中央大學
摘要:	High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method, Samples employing a three-period GaN/Al0.08Ga0.92N (100 Angstrom/100 Angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm(2)/V.s and 1.3x10(17) cm(-3) (at 300 K), respectively, The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed, By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8x10(12) cm(-2) and 5300 cm(2)/V.s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-duality 2DEG channel of the GaN/AlGaN bottom heterointerface. (C) 1997 American Institute of Physics.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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