Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39132

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39132

题名:	Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film
作者:	Laih,LH;Wang,JC;Chen,YA;Tsay,WC;Jen,TS;Chen,JS;Hong,JW
贡献者:	物理研究所
关键词:	SILICON
日期:	1997
上传时间:	2010-07-08 14:05:55 (UTC+8)
出版者:	中央大學
摘要:	An annealed intrinsic hydrogenated amorphous silicon germanium (i-a-SiGe:H) barrier layer deposited on a Si wafer ([111],4 k Ohm-cm) was employed to fabricate a planar interdigitated metal-semiconductor-metal photodetector (MSM-PD). At a bias of 15 V, and an incident light wavelength of 850 nm, this Si-based MSM-PD with an annealed 70 nm i-a-SiGe:H film had a responsivity of about 0.32 A/W, and a dark current density of around 400 fA/mu m(2). Also; the temporal response of this device had a rise time of 21 ps, a fall-time of 236 ps and a full-width at half-maximum (FWHM) of 51 ps.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
显示于类别:	[物理研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	484	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing