Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures

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題名:	Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
作者:	Lin,CF;Cheng,HC;Huang,JA;Feng,MS;Guo,JD;Chi,GC
貢獻者:	物理研究所
關鍵詞:	CHEMICAL-VAPOR-DEPOSITION;ELECTRON-GAS;DEPENDENCE;EPITAXY
日期:	1997
上傳時間:	2010-07-08 14:06:05 (UTC+8)
出版者:	中央大學
摘要:	In this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Angstrom AlGaN compositional stair-step layer deposited onto 1.3 mu m GaN epitaxial layer. There is a 100 Angstrom GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6x10(12) cm(-2) and 5413 cm(2)/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed. (C) 1997 American Institute of Physics.
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[物理研究所] 期刊論文

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