Study of energy straggling and multiple scattering in silicon microstrip detectors

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39159

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39159

题名:	Study of energy straggling and multiple scattering in silicon microstrip detectors
作者:	Hou,SR;Chang,YH;Chen,AE;Lin,WT
贡献者:	物理研究所
日期:	1997
上传时间:	2010-07-08 14:06:46 (UTC+8)
出版者:	中央大學
摘要:	The performance of silicon microstrip detectors in electron and pion beams of momenta up to 50 GeV has been studied, Results are compared to full GEANT simulations. The energy loss straggling in silicon wafers is compared to the Urban and PAI models, Productions of delta-ray electrons and electron-positron pairs by 50 GeV electrons, seen as multi-cluster events, are compared to GEANT calculations, The spatial resolution is determined with the detector intrinsic resolution simulated by Gaussian smearing and the multiple scattering calculated by Moliere theory. The deflection due to multiple scattering in crystalline structure was investigated by placing a GaAs wafer at various angles between active detectors, Larger deflection is seen in data of inclined tracks at 45 degrees to the silicon crystalline plane.
關聯:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
显示于类别:	[物理研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	394	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing