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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39172

    Title: Characterization of low temperature GaAs grown by molecular beam epitaxy
    Authors: Lee,WC;Hsu,TM;Chyi,JI;Lee,GS;Li,WH;Lee,KC
    Contributors: 物理研究所
    Date: 1996
    Issue Date: 2010-07-08 14:07:12 (UTC+8)
    Publisher: 中央大學
    Abstract: Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200 degrees C-400 degrees C, and subsequently annealed in the growth chamber at 600 degrees C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic, These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.
    Appears in Collections:[物理研究所] 期刊論文

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