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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39175

    Title: Effects of dielectrics on the characteristics of large-area silicon microstrip sensors
    Authors: Tsay,WC;Chen,YA;Laih,LH;Hong,JW;Chen,AE;Lin,WT;Chang,YH;Hou,SR;Hsu,SL;Li,CR;Ting,HJ;Chiang,ST
    Contributors: 物理研究所
    Keywords: DETECTORS
    Date: 1996
    Issue Date: 2010-07-08 14:07:17 (UTC+8)
    Publisher: 中央大學
    Abstract: An 8 x 4 cm(2) single-sided silicon microstrip sensor with coupling capacitors and polysilicon bias resistors has been fabricated with planar technology. The oxide-nitride-oxide (ONO) films have been chosen to replace the usual SiO2 layer as the dielectric of the coupling capacitor. In conjunction with a reordering of the process sequence for layer formations, the proposed process could be used to fabricate sensors with self-moisture protection and free from the effect of pinholes. From the measurement results of special p-n junction test structures, we found that their leakage current was dominated by that of the sidewall one. Stress measurement and Sirt1-etch analysis revealed that the sidewall leakage current was increased bq the dielectric stress and implantation damage. A boron solid-source predeposition process was employed to reduce this leakage current. From the results of electrical measurement and beam test on sensors, it was shown that the proposed process uas able to produce sensors having very good performance.
    Appears in Collections:[物理研究所] 期刊論文

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