Energy straggling and multiple scattering in silicon strip detectors

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題名:	Energy straggling and multiple scattering in silicon strip detectors
作者:	Anticic,T;Battiston,R;Braunschweig,W;Chang,YH;Chien,CY;Chen,AE;Hou,SR;Lin,CH;Lin,WT;Ostonen,R;Spartiotis,K;Syben,O;Toker,O;Wittmer,B
貢獻者:	物理研究所
日期:	1996
上傳時間:	2010-07-08 14:07:19 (UTC+8)
出版者:	中央大學
摘要:	We present a test beam study of energy straggling and multiple scattering in silicon strip detectors using electrons and pions of momenta up to 50 GeV. Results are compared with GEANT simulation using a simple algorithm to parameterize energy loss distribution. The deflection due to multiple scattering in crystalline structure was investigated by placing a GaAs wafer at various angles.
關聯:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
顯示於類別:	[物理研究所] 期刊論文

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