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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39237


    Title: MODELING TEMPERATURE-DEPENDENT PHOTOREFLECTANCE SPECTRA OF SINGLE ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
    Authors: LU,NH;HSU,TM
    Contributors: 物理研究所
    Keywords: FRANZ-KELDYSH OSCILLATIONS;ELECTRIC-FIELD;ENERGY-LEVELS;GAAS;HETEROSTRUCTURE;SEMICONDUCTORS;SI;SPECTROSCOPY;TRANSITIONS;GAAS/GAALAS
    Date: 1995
    Issue Date: 2010-07-08 14:09:16 (UTC+8)
    Publisher: 中央大學
    Abstract: We attempt to deal with the physical processes involved in the temperature-dependent photoreflectance of single AlGaAs/GaAs modulation-doped heterojunction structures. Building on the assumption that photomodulation mechanism is due chiefly to modification of the band bending in the buffer layer, we apply the Franz-Keldysh theory to simulate the temperature-dependent photoreflectance spectra of single AlGaAs/GaAs modulation-doped heterojunction structures. In view of the nonuniformity of the electric field within the buffer layer, the field profile of which is calculated through the application of self-consistent variational approach, the WKB method is used to approximate the effective change in the dielectric function. A comparison between the experimental and the simulated results attests the validity of our assumption. The effects of temperature on the electric-field strengths, estimated from the extrema of the Franz-Keldysh oscillations, can be accounted for by considering the temperature dependence of the Fermi level. (C) 1995 American Institute of Physics.
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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