THE EFFECT OF POST DEPOSITION LOW-ENERGY PLASMA BOMBARDMENT ON THE ULTRA-THIN HYDROGENATED SILICON-OXIDE FILMS

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题名:	THE EFFECT OF POST DEPOSITION LOW-ENERGY PLASMA BOMBARDMENT ON THE ULTRA-THIN HYDROGENATED SILICON-OXIDE FILMS
作者:	BAO,TI;I,L
贡献者:	物理研究所
关键词:	CHEMICAL-VAPOR-DEPOSITION;RF MAGNETRON PLASMAS;A-SI-H;AMORPHOUS-SILICON;TEMPERATURE
日期:	1995
上传时间:	2010-07-08 14:10:03 (UTC+8)
出版者:	中央大學
摘要:	The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a-SiOx:H (0 less than or equal to X less than or equal to 2) films is investigated by alternate deposition and post-deposition Ar plasma treatment processes in a rf hollow oval magnetron system using an in situ ellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film. (C) 1995 American Institute of Physics.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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