Top sawtooth grating for GaAs/AlGaAs quantum well IR detectors

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題名:	Top sawtooth grating for GaAs/AlGaAs quantum well IR detectors
作者:	Chi,GC;Juang,C
貢獻者:	物理研究所
日期:	1995
上傳時間:	2010-07-08 14:10:07 (UTC+8)
出版者:	中央大學
摘要:	The enhancement factors for grating materials (GaAs and Si) in top sawtooth grating quantum well IR detectors are calculated. It is shown that the absorption processes are angle limited for GaAs gratings and are reflection limited for Si gratings. A major advantage of using Si gratings is that there is a nearly constant enhancement factor region, which will greatly ease restrictions on device design and processing.
關聯:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
顯示於類別:	[物理研究所] 期刊論文

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