DIFFERENTIAL PHOTOREFLECTANCE OF SI-DELTA-DOPED GAAS

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39280

Title:	DIFFERENTIAL PHOTOREFLECTANCE OF SI-DELTA-DOPED GAAS
Authors:	HSU,TM;LU,NH;TSAI,SP;WU,JR
Contributors:	物理研究所
Keywords:	HETEROJUNCTIONS;SPECTROSCOPY;INTERFACES
Date:	1994
Issue Date:	2010-07-08 14:10:43 (UTC+8)
Publisher:	中央大學
Abstract:	The signals from buried layer in Si-delta-doped GaAs of different undoped cap thickness have been studied by differential photoreflectance. The first-derivative-like line shape of differential photoreflectance is attributed to the energy transitions related to the modulations of two-dimensional electron gas density. We have observed a change of line shape at low temperatures. This change of line shape is probably due to the change of potential distribution in the conduction band, which is caused by the surface Fermi-level pinning and surface photovoltaic effect.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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