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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39287


    Title: IMPROVED PROCESS OF FABRICATING AC-COUPLED SILICON MICRO-STRIP SENSORS
    Authors: TSAY,WC;HONG,JW;CHEN,A;LIN,WT;HSU,CY;JAN,SM;KUO,CL
    Contributors: 物理研究所
    Keywords: DETECTORS
    Date: 1994
    Issue Date: 2010-07-08 14:10:56 (UTC+8)
    Publisher: 中央大學
    Abstract: A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.
    Relation: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    Appears in Collections:[物理研究所] 期刊論文

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