The p-d hybridization of as grown, sulfur-annealed and prolonged sulfur-annealed copper indium disulfide have been studied by photoreflectance and a simple theoretical model. The sulfur-annealed sample has been found to have larger d electron contribution to the upper valence bands. This is explained as the decrease of energy separation between p-d energy level caused by the compensation of dominated defects in the crystal.
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
