OPTICAL CHARACTERIZATION OF COHERENTLY STRAINED SHORT-PERIOD SUPERLATTICE (INAS)N(ALAS)N GROWN BY MOLECULAR-BEAM EPITAXY

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题名:	OPTICAL CHARACTERIZATION OF COHERENTLY STRAINED SHORT-PERIOD SUPERLATTICE (INAS)N(ALAS)N GROWN BY MOLECULAR-BEAM EPITAXY
作者:	WOO,DH;KIM,DW;LEEM,YA;WOO,JC;OH,JE;HSU,TM
贡献者:	物理研究所
关键词:	LAYER SUPERLATTICES;ALLOY
日期:	1992
上传时间:	2010-07-08 14:13:18 (UTC+8)
出版者:	中央大學
摘要:	Ultra-thin superlattices (UTSL's) (InAs)n(AlAs)n for n = 1, 2, 3, and 4 have been grown by molecular beam epitaxy in order to obtain the artificial construction of a perfect layered alloy. The optimum MBE growth condition of InAs and AlAs monolayers was obtained through the calibration of RHEED intensity oscillations. It was found that a strong oscillation of the specular beam intensity during the growth of InAs can be successfully obtained only in the narrow temperature region between 450 and 480-degrees-C. The structural property of the UTSL's was investigated by X-ray diffraction, complemented by Raman scattering measurement. Coherently strained superlattices were kept up to n = 3, while in the case of (InAs)4(AlAs)4 UTSL superlattices are rather intermixed due to the large excess strain energy. Unlike the (AlAs)n(GaAs)n, the photoluminescence peak energy reaches maximum when n = 2, at the energy of about 50 meV below the fundamental gap of In0.5Al0.5As. This is the first experimental observation that gives a corresponding result with the tight-binding calculation on the subband of the strained (InAs)n(AlAs)n UTSL's.
關聯:	SURFACE SCIENCE
显示于类别:	[物理研究所] 期刊論文

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