PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39360

Title:	PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors:	LIU,DG;CHANG,KH;LEE,CP;HSU,TM;TIEN,YC
Contributors:	物理研究所
Keywords:	INTERBAND-TRANSITIONS;GALLIUM-ARSENIDE;DEPLETION REGION;LAYER;DIFFUSION;SILICON;GE
Date:	1992
Issue Date:	2010-07-08 14:13:22 (UTC+8)
Publisher:	中央大學
Abstract:	Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	545	View/Open

社群 sharing