REDUCED LEAKAGE CURRENT AND IMPROVED BREAKDOWN VOLTAGE OF SILICON-OXIDE FILMS DEPOSITED IN LOW-ENERGY RF DISCHARGES AT ROOM-TEMPERATURE

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題名:	REDUCED LEAKAGE CURRENT AND IMPROVED BREAKDOWN VOLTAGE OF SILICON-OXIDE FILMS DEPOSITED IN LOW-ENERGY RF DISCHARGES AT ROOM-TEMPERATURE
作者:	WU,MS;BAO,TI;I,L
貢獻者:	物理研究所
關鍵詞:	PLASMA DEPOSITION;MAGNETRON PLASMAS;ION-BOMBARDMENT;DIOXIDE
日期:	1992
上傳時間:	2010-07-08 14:13:26 (UTC+8)
出版者:	中央大學
摘要:	The I-V characteristics of SiO(x) films deposited in an RF magnetron system with low pressure (approximately 6 mTorr) SiH4/O2/Ar gas mixtures have been studied. With the enhanced surface processes under the high flux, low energy ion bombardment, the substrate temperature (< 50-degrees-C) was lower than in other conventional plasma deposition processes (> 300-degrees-C). The film deposited under the optimum conditions without annealing has a very smooth surface, low leakage current (< 10(-10) A for F < 6 MV cm-1) and high breakdown field strength (9-10 MV cm-1). It is found that the breakdown voltage is strongly correlated with the initial injection current, The film roughness, porosity and stoichiometry are the important factors for the electrical properties and can be controlled. The effects of RF power, deposition rate, and the oxygen to silane partial pressure ratio are investigated and discussed.
關聯:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
顯示於類別:	[物理研究所] 期刊論文

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