THE DESIGN OF THE L3 SILICON MICROVERTEX DETECTOR

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題名:	THE DESIGN OF THE L3 SILICON MICROVERTEX DETECTOR
作者:	ALPAT,B;AMBROSI,G;BARBAGLI,G;BABUCCI,E;BATTISTON,R;BERTUCCI,B;BILEI,GM;BROOKS,M;BURGER,WJ;CARIA,M;CASTELLINI,G;CHECCUCCI,B;CHEN,A;COAN,TE;COMMICHAU,V;DONAT,A;FIANDRINI,E;GAU,SS;HELLER,R;HERVE,A;HOFER,H;LANDI,G;L
貢獻者:	物理研究所
日期:	1992
上傳時間:	2010-07-08 14:13:36 (UTC+8)
出版者:	中央大學
摘要:	An upgrade of the L3 central tracking system, a silicon microvertex detector (SMD), is described. The detector consists of two layers of silicon, each equipped for r-phi and z readout with resolution almost-equal-to 6-mu-m and almost-equal-to 20-mu-m respectively. The SMD will provide full azimuthal coverage over the polar angular range 22-degrees less-than-or-equal-to theta less-than-or-equal-to 158-degrees. The total thickness is almost-equal-to 0.9% of one radiation length.
關聯:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
顯示於類別:	[物理研究所] 期刊論文

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