Silicon ion implantation on GaAs through tantalum silicide and aluminum nitride films is investigated. Rapid thermal annealing is used to activate the dopant and to provide an abrupt shallow junction. After the annealing process, the carrier mobility, ideality factor and barrier height of Ta5Si3/GaAs Schottky diodes were measured. The carrier profiles were determined by C-V and differential Hall methods. A numerical range scaling model is adopted to fit the data and obtain the diffusion coefficient of silicon in GaAs. Rutherford backscattering and photoreflectance were performed in order to study the interdiffusion and internal field near the surface. Our experiments show that the through-film (tantalum silicide or aluminum nitride) implantation is a promising process in self-aligned (SAG) technology.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS