RAPID THERMAL ANNEALING OF THE THROUGH-FILM SILICON IMPLANTATION ON GAAS

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39392

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39392

題名:	RAPID THERMAL ANNEALING OF THE THROUGH-FILM SILICON IMPLANTATION ON GAAS
作者:	HUANG,FS;CHEN,WS;HSU,TM;LEE,CW
貢獻者:	物理研究所
日期:	1991
上傳時間:	2010-07-08 14:14:27 (UTC+8)
出版者:	中央大學
摘要:	Silicon ion implantation on GaAs through tantalum silicide and aluminum nitride films is investigated. Rapid thermal annealing is used to activate the dopant and to provide an abrupt shallow junction. After the annealing process, the carrier mobility, ideality factor and barrier height of Ta5Si3/GaAs Schottky diodes were measured. The carrier profiles were determined by C-V and differential Hall methods. A numerical range scaling model is adopted to fit the data and obtain the diffusion coefficient of silicon in GaAs. Rutherford backscattering and photoreflectance were performed in order to study the interdiffusion and internal field near the surface. Our experiments show that the through-film (tantalum silicide or aluminum nitride) implantation is a promising process in self-aligned (SAG) technology.
關聯:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
顯示於類別:	[物理研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	496	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing