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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39399


    Title: WANNIER EXCITON BINDING-ENERGIES IN GAAS/ALXGA1-XAS QUANTUM-WELLS
    Authors: LU,NH;HUI,PM;HSU,TM
    Contributors: 物理研究所
    Date: 1991
    Issue Date: 2010-07-08 14:14:49 (UTC+8)
    Publisher: 中央大學
    Abstract: We calculate the binding energies of Wannier excitons in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Al(x)Ga1-xAs as a function of several experimentally adjustable parameters. The exciton Hamiltonian is expressed in the two-band model within the effective mass approximation. The well depth is taken to be finite. A variational method is adopted and a suitable trial wave function with separable form is chosen to solve for the eigenenergies. The binding energies of both the heavy-hole exciton and the light-hole exciton are calculated as a function of the aluminium concentration, band offsets, and the GaAs quantum well width.
    Relation: SOLID STATE COMMUNICATIONS
    Appears in Collections:[物理研究所] 期刊論文

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