English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65275/65275 (100%)
Visitors : 20908752      Online Users : 220
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/3965


    Title: DRAM中的被動式電壓對比;Passive Voltage Contrast in DRAM
    Authors: 王嘉鴻;Chia-Hung Wang
    Contributors: 化學工程與材料工程研究所
    Keywords: 記憶體;電壓對比;Voltage Contrast;DRAM
    Date: 2006-12-29
    Issue Date: 2009-09-21 12:27:12 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 被動式電壓對比 在半導體電路裡面為一種有效率及成功率高的檢測技術。可以運用在對於不同種類的電路缺陷,如 開路所造成的不正常高電阻,短路所造成的漏電流。 在電壓對比技術中,掃描式電子顯微鏡與聚焦離子束系統為主要運用儀器。由於電壓對比產生原理中,兩系統對於試片所造成的效果類似,可以在此論文中假設為相近的作用源。本文中,對於電壓對比的原理有粗略的提及。 而實驗中所觀察的試片為 華亞科技公司生產的 110nm製程 DRAM晶片。在對晶片的電壓對比觀察實驗中,選擇金屬線與金屬線中連結層為主要觀察部位。 文中對於各接觸層的電壓對比圖像,利用不同加速電壓所造成的顯示成果作討論。對於電子束與離子束所造成的差異,也有整理。 Passive voltage contrast was very successfully implemented in DRAM to identify the location different mechanisms of circuit failure, such as failing continuity, high resistance, current leakage, and functionality. Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) systems are routinely utilized for passive voltage contrast. The both SEM and FIB system assume a general familiarity in this work; in addition,brief explanations of some basic concepts will be mentioned. In this thesis, a background explanation of the passive voltage contrast (PVC) technique in both the SEM and FIB. 110nm Inotera DRAM chip was used be observing sample. Layer-by-layer deprocessing and top-view examinations were used to do the structure inspection at contact level prior to passive voltage contrast imaging. Several passive voltage contrast image examples of contact level are included to outline the technique and results of this study that variant voltage and beam source are discussed.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat
    0KbUnknown1313View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明