本文是針對未來半導體的生產過程中，化學機械研磨後的表面清洗作一界面現象的研究。本實驗是利用銅表面清潔後，接觸角的量測的方法，儘量去得到很低的接觸角標準差。特別是在晶片表面平坦化之後，會有許多微粒子以及金屬離子產生。使用DSA-10的液滴量測儀器在短時間的量測時能得到良好的實驗結果。液滴角度量測的原理是利用液滴外觀影像與基材的基準線，利用楊氏方程式計算可以求得接觸角。 本文的研究內容，主要是觀察界面活性劑在銅晶片表面的潤濕現象，表面越溼潤時，表面接觸角會越小，代表著銅晶片表面能量越低。例如；去離子水在表面氧化亞銅的銅晶片，及接觸角是100度，是非常的疏水，在銅表面上能量也是相當的高。 為了避免表面產生不良的缺陷，如金屬離子殘留或水痕等缺陷。因此這個研究是以添加界面活性劑的水溶液對銅晶片的潤溼性做研究，實驗中發現當動態接觸角量測時間在第30秒時，接觸角變化幅度趨於平緩；濃度到達十倍臨界微胞濃度(CMC)時，其動態接觸角會接近最低角度。這可意味著含有界面活性劑的清潔液在第30秒及10倍臨界微胞濃度時表面能會比較穩定。在比較陽離子或陰離子型界面活性劑時，可從實驗數據觀察到同一類型的界面活性劑，如SDS及DTAB界面活性劑，在頭基相同情況下，比較其尾鏈對銅濕潤性影響。 我們可以發現尾基碳鏈越長越親水；帶有雙尾鏈的DDAB及AOT界面活性劑溶液接觸角更可達到30以下。SDS系列的陰離子界面活性劑，以去離子水浸泡後回復的接觸角更可以到達95度，很接近初始值100度，表示表面能又回到原來的狀態，添加酸鹼及鹽類到不同型態溶液中，也可讓接觸角降低，使得銅晶片表面具有濕潤性質。 In this paper, we can know that the semiconductor production process, especially the Post CMP process is very important. The Post CMP cleaning can let to know how to research the phenomena of copper surface. We present our method for the measurement of contact angles on the surface of copper wafer cleaning process because the standard deviation obtained in our measurements achieved unexpectedly low error. DSA-10 equipment that construction of a goniometer connected with a specially prepared computer program allowed us to repeat measurements several times over a short time course, yielding excellent results. After defining points on the outline of the image of a drop and its baseline as well of the first approximation of the outline of the drop, an iterative process is initiated that is aimed at fitting the model of the drop and baseline. The measurements were made, the work of adhesion is determined according to Young’s equation. In this study, the main to observe wetting behavior phenomena solders which surfactants on the copper wafer. No sooner had the surface wet than the contact angle became lower. It is represented that surface energy is lower. Example, DI-water wet on the copper wafer surface of cuprous oxide that contact angle is 100° and the surface is very hydrophobic. The surface energy is highly on the surface of copper wafer. For avoid to the defects on the surface, such as the metal ions and the water mark were remained. In this study, we add the surfactants in the DI-water solvent to research wetting behavior on the copper wafer. In our experiment, we can found the dynamic contact angle that measurement time is 30th seconds and the angle variable is stable status. When the critical micelle concentration (CMC) reach tenth times that the angle variable is the lowest. That is show the cleaning solution that include the surfactants is status in 30th dynamic contact angle and 10th CMC. In compare to the cation and anion of surfactant, we can observe that have the same characteristic type surfactant, having the same head group and the different tail chain. In order to compare the tail chain affects the wet behavior on the surface of copper that we do experiment about the SDS and DTAB different tail chain effect. We can find that when the carbon tail chain is longer, it wetting ability is more hydrophilic. With double tail chain surfactant, as like the DDAB and AOT that contact angle can lower than 30 degree. When use SDS types surfactant to immerse the DI-water that the contact angle can recover to 95 degree. That approach to the initial number 100 degree. It is show that surface energy recovers initial status. Add to the acid, alkali and salt solution to decrease the contact angle for wetting the surface of copper wafer.
