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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/4011


    Title: 銅的蝕刻與保護行為之研究;Study of copper etching and protection
    Authors: 張程皓;Cheng-Hao Jhang
    Contributors: 化學工程與材料工程研究所
    Keywords: 化學機械研磨;銅晶片;etching;CMP
    Date: 2007-05-31
    Issue Date: 2009-09-21 12:28:27 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本研究是針對未來半導體的生產過程中,化學機械研磨後的表面清洗做一銅蝕刻現象的研究。 一般化學研磨後清洗液多為水溶性的液體,這些液體不外乎為酸性或鹼性而很少發現有中性卻能有效清除雜質,所以酸或鹼多少都會造成銅晶片的蝕刻,而我們發現蝕刻其實是由於銅氧化物的關係,所以我們在溶液中添加除氧劑,減少氧與銅的接觸就等於是減少氧化物的產生,我們發現確實有助於減少腐蝕的發生。而我們也發現在同濃度的酸跟鹼,鹼會比酸的蝕刻速率快。 另一種防止腐蝕的方法是我們添加薄膜保護劑,薄膜保護劑會以化學吸附的方式吸附在銅表面上,進而達到保護腐蝕的效果,實驗結果發現,硫醇,氮唑類保護效果較佳。 由於添加保護劑就一定要考慮保護劑殘留的問題,最後我們會再針對保護劑移除的問題做一研究。我們使用液滴量測儀,液滴角度量測的原理是利用液滴外觀影像與基材的基準線,利用楊氏方程式計算可以求得接觸角,在輔以UV光譜探討其機制,實驗結果發現Azole類可以被還原,而達到移除的目的。 In this studying we can know that semi conduction production process, especially the Post Chemical mechanical Polishing (Post CMP) is very important. Post CMP caused copper wafer surface be etched. Reduction copper surface etching is our purpose. We detect copper etching due to copper oxide therefore oxygen scavenger can reduction etching rate. We have two methods to prevention etching that additive oxygen scavenger and film-forming agent. Additional film-forming agent should be considered removal that measurement of contact angle to help we analysis. Example, DI-water wet on the fresh copper surface that contact angle is 70o and deposit BTA is 80o then we add hydrazine detection contact angle to return 70o and BTA be moved. The UV-Vis spectrum of reduction.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

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