在氮化鎵（GaN）系列的發光二極體（LED）中，在N型氮化鎵表面進行粗化對於光萃取的增加有很重要的影響。現在，光輔助化學濕蝕刻法（photo-enhance chemical wet etching method）已被證實可以有效的粗化N型氮化鎵表面，且會形成規則的六面體形狀。 我們使用氫氧化鉀溶液（KOH）當作PEC的蝕刻液去蝕刻N型氮化鎵表面。實驗細節將在這次報告中說明。在此研究中，不同的蝕刻濃度，濃度越濃，反應越快；不同的蝕刻時間，隨著時間的增加，角錐的大小會變大、GaN的厚度會減少、角錐覆蓋率增加；對於光強度的增加經由實驗應證跟角錐覆蓋率的提升有一定的關係。 Texture on n-GaN surface is an important issue to improve the light extraction for GaN-based LEDs. Currently, using photo-enhance chemical etching (PEC) has been proven to be an efficient method to roughen the n-type GaN surface. Regular pyramids would form on the n-GaN surface. We use KOH solution to be the etching solution of PEC process. The detail results will be reported in this study. In this study, as the concentration of etch solution increasing, the etching reaction will be faster; as the etching time increasing, the size of the pyramid will become larger, the depth of GaN film will be reduced and the cone coverage will raise; the cone coverage raise is the key factor for the enhancement of the light intensity.
