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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/40523


    Title: C-頻段(5.1-5.8GHz)射頻元件及模組技術開發---子計畫II:異質接面高速場效應電晶體在C-頻段射頻放大器之應用(III);Development of Heterostructure FET and Its Application on C-Band RF Power Amplifier (III)
    Authors: 詹益仁;辛裕明;陳巍仁
    Contributors: 電機工程系
    Keywords: C頻段射頻功率放大器;射頻元件;異質接面高速場效應電晶體;C-band radio frequency power amplifier;Radio frequency device;Heterostructure field effect transistor (FET);電子電機工程類;電信工程
    Date: 2002-07-01
    Issue Date: 2010-11-03 16:31:08 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 研究期間:9008 ~ 9107
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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