活性離子蝕刻技術在AlGaInP/InGaAs高速場效應電晶體之製作; The Technology of Reactive Ion Etching (RIE) for the Fabrication of AlGaInP/InGaAs Heterostructure High Speed Field Effect Transistors

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/40534

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/40534

Title:	活性離子蝕刻技術在AlGaInP/InGaAs高速場效應電晶體之製作;The Technology of Reactive Ion Etching (RIE) for the Fabrication of AlGaInP/InGaAs Heterostructure High Speed Field Effect Transistors
Authors:	詹益仁
Contributors:	電機工程學系
Keywords:	活性離子蝕刻;高速場效電晶體;磷化鋁鎵銦;Reactive ion etching (RIE);High speed field effect transistor;Aluminum gallium indium phosphide;材料科技;電子電機工程類
Date:	2002-07-01
Issue Date:	2010-11-03 16:31:35 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：9008 ~ 9107
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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