於130℃下熱處理，Sn5Ag銲料和銅箔間的界面反應，探討其界面化合物的生成和銅箔消耗的情形，並計算出在130℃下的擴散係數 D=1.48×10-13 (cm2/s) 。另外探討在不同電流密度之下，Sn/Cu和Sn5Ag/Cu界面反應，並利用通量來解釋銅箔消耗及化合物生長的情形。陰極端銅箔的消耗是由於電遷移效應下使得銲料中的銅原子快速被遷移至陽極端。而單純熱處理反應下，由銅箔往錫銅化合物的銅溶解通量會比銅在錫銅化合物中的擴散通量快，因此後者為速率決定步驟。 實驗結果發現，銅箔消耗情形，Sn5Ag/Cu會比Sn/Cu來的緩和，這是因為Sn5Ag/Cu在界面處會生成錫銀及錫銅混合的化合物層，有效的阻擋從化合物層到銲料中的銅溶解，同時也降低從銅箔到化合物層的溶解。而在Sn5Ag/Cu和Sn/Cu通電下的反應皆可發現，銅箔的消耗和化合物的生成都隨著電流密度的增加而增加。 Under 130℃ heat treatment, we concern about the interfacial reaction between Sn5Ag solder and investigate the Cu consumption behavior and the formation of intermetallic compound. We obtain that , the diffusion coefficient under 130℃ is about D=1.48×10-13 (cm2/s). Further, we investigate the interfacial reaction between Sn solder and Cu and also Sn5Ag solder and Cu under different current densities. And explain the Cu consumption behavior and the formation of intermetallic compound by flux. Cu consumption at cathode side is due to Cu atom transported to anode side immediately under current stressing. Under thermal treatment, Cu dissolution flux from Cu to IMC is faster than the diffusion flux in IMC layer. So, the latter one is rate determine step. From experiment results, the Cu consumption of Sn/Cu is much serious than Sn5Ag/Cu, this is because mixed Ag-Sn and Cu-Sn compound layer which formed at the interface can retard the Cu dissolution from IMC layer to solder matrix and also from Cu foil to IMC layer effectively. For Sn5Ag/Cu and Sn/Cu reaction under current stressing, we found that, both Cu consumption and IMC formation increase over time.
