本研究以電漿輔助化學氣相沉積法(PECVD)製備超疏水氟碳薄膜，其成膜單體為六氟苯(Hexafluorobenzene; C6F6) ，探討連續式和脈衝式電漿對其製備之膜材特性的影響情形。亦由SEM與AFM觀察膜材表面形貌，和FTIR及XPS進行化學分析，來探討電漿製備超疏水氟碳膜之成膜機制。 實驗結果顯示連續式電漿調控電源功率和沉積位置成膜，皆因單體持續解離而獲得平坦疏水性薄膜，而在低瓦數搭配遠離電源區成膜，可以提升對於基材之附著性質至4B。 另一方面，藉由脈衝式電漿調控能率循環(DC)來降低單體解離和增加聚合反應的機率，結果顯示低功率和低DC在電漿區成膜，可獲得接觸角大於150°之超疏水薄膜且具有239 奈米之表面粗糙度。進一步藉由全氟己烷電漿驗證具有π-π鍵結之六氟苯，易受電漿活化而迅速在氣相成核團聚成高碳數分子團為表面粗糙度之成因。而於附著性探討中，添加甲基丙烯酸甲酯(MMA)，發現隨著含量的增加有些微的提升薄膜之附著力，但也使得疏水性質的降低。 Preparation of superhydrophobic films by plasma enhance chemical vapor deposition method using C6F6 as the monomer has been developed. The films were prepared by C6F6 plasma in continuous wave and pulsed wave. The effects of power and deposition position on the films were investigated by using SEM、AFM、FTIR and XPS. In continuous wave, the smooth hydrophobic films was obtained. And with increasing power, the degree of dissociation monomer was increased. With decreasing the distance from power electrode, the radicals were increased. The films prepared with low power and long distance from power electrode had good adhesion with substrate (4B) . In pulsed plasma, with decreasing duty- cycle (DC), the dissociation of monomer was decreased and the probability of polymerization was increased. The films prepared with lower power and lower duty-cycle at the plasma region had superhydrophobic behavior with contact angle over 150° and 239 nm of roughness surface. The double bond of C6F6 had higher polymerized to form high molecular particles in the gas phase and compared with the single bond of C6F14 plasma,. Finally, with increasing MMA, the adhesion of the films were slightly improved but the hydrophobic behavior of the films were decreased.