本研究主要運用自動磨料噴射技術，並以半導體廠報廢矽晶圓表面作為改善對象，探討磨料噴射技術對報廢矽晶圓表面電路層之去除及表面拋光改善效果。本研究並提出兩階段加工法，分為粗拋光與精微拋光加工法，首先在粗拋光研究方面是利用田口實驗計畫法進行實驗規劃，以獲得自動磨料噴射技術各加工參數對報廢矽晶圓表面粗糙度與材料移除量的影響與最佳水準值。接著在精微拋光方面由所獲得之最佳加工參數組合依續探討改變加工時間、不同初始矽晶圓表面與磨料粒徑等加工參數，以追求磨料噴射技術對矽晶圓表面改善至鏡面效果。實驗結果發現自動磨料噴射技術可有效去除報廢矽晶圓表面電路層，並配合由田口實驗計畫法所獲得之最佳加工參數組合，可將矽晶圓表面粗糙度0.14μm Ra 降至0.033μm Ra ，且矽晶圓表面呈現鏡面反射效果。另外研究亦探討經磨料噴射加工後，矽晶圓表面材料特性，發現利用SiC 磨粒進行磨料噴射加工後之矽晶圓表面沒有SiC嵌入表面效應，另外由金相顯微鏡觀察加工後矽晶圓截面，沒有微裂痕產生。 This research mainly uses the automatic abrasive jet technology and takes scrap wafer surface of the semiconductor factory as an improving target in order to probe into the abrasive jet technology for cleaning scrap wafer surface circuit layer and improve surface polishing effect. This study has two processed steps that can be divided into the rough polishing and micro polishing processing method. First, the study of the rough polishing processing uses the Taguchi Method to obtain the optimization of manufacturing process parameters for scrap wafer surface roughness and remove weight on automatic abrasive jet technology. Second, in the micro polishing processing, the best combination of parameters are used to continue discussing the different of initial silicon wafer surface, machining time and abrasive mesh in turn. Expecting that the silicon wafer surface can be improved like a mirror after automatic abrasive jet technology. From the experimental result, we will find the automatic abrasive jet technology can clean the scrap wafer surface circuit layer effectively and conjugate the best combination of parameters by Taguchi Method, the silicon wafer surface roughness value can drop from 0.14μm Ra to 0.033μm Ra, and the silicon wafer surface is presented the reflection result of the mirror. Furthermore, studying and investigating the silicon wafer surface characteristic of material after the abrasive jet technology we will find that utilizing the SiC abrasive jet technology, the silicon wafer surface has no SiC to insert the surface effect and it does not produce any cracks which is observed by the metalloscope.
