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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/4153


    Title: Sn(Cu)焊料與不同NiCo組成合金墊層之介面反應研究;Interfacial reaction between Sn(Cu) solder and NiCo alloy UBM
    Authors: 陳駿維;Chun-Wei Chen
    Contributors: 化學工程與材料工程研究所
    Keywords: 介面反應;合金墊層;電子構裝;Interfacial reaction;alloy UBM;Electronic Packaging
    Date: 2009-06-04
    Issue Date: 2009-09-21 12:32:35 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本研究主要探討NiCo合金墊層與Sn(Cu)無鉛焊料間的介面反應,首先利用電鍍法將不同Co濃度之NiCo合金層鍍在銅層上,接著將Sn(Cu)焊料與NiCo合金在250 ℃下進行迴焊,最後觀察在介面上生成之介金屬層其生長情形與種類型態並探討NiCo合金組成及焊料Cu濃度對介面反應的影響。 實驗結果發現在當墊層Co濃度從純Ni、Ni-20%Co、Ni-63at%Co到純Co時,介面生成的介金屬依序為單一相的Ni3Sn4,(Ni,Co)Sn2、(Ni,Co)Sn3及CoSn3,且發現Ni-63at%Co墊層的消耗是所有實驗組別裡最快的,這是因為其生成介金屬的結構較鬆散所致。 從Sn(Cu)/NiCo反應結果發現對Ni-20at%Co墊層而言,當焊料Cu濃度高於0.2wt%迴焊300秒後,會有額外的針狀(Ni,Cu)3Sn4相生成在第一相(Ni,Co)Sn2上方並發現在焊料裡添加Cu會增快反應中所生成之(Ni,Co)Sn2的生長速率。對純Co及Ni-63at%Co墊層而言,焊料中Cu的添加及Cu濃度的提升對反應後介金屬種類生成沒有影響,其介面生成的相皆為CoSn3,但是其皆會抑制反應中所生成之CoSn3的生長速率。 In the work, we study soldering reaction between Ni-Co alloy layer and Sn(Cu) Pb-free solders. Different Co concentrations in Ni-Co alloy layer were electroplated on Cu foils. Then, Sn(Cu) solders were reflowed on the Ni-Co alloy layers at 250 ℃ to investigate the growth situation and morphology of IMCs and to discuss the effect of Co concentration and Cu concentration on the reaction between Sn(Cu) and Ni-Co layer. Experimental results show that when the composition of NiCo alloy are Ni, Ni-20at%Co, Ni-63at%Co and Co, the corresponding IMCs formed at the interface are Ni3Sn4, (Ni,Co)Sn2, (Ni,Co)Sn3 and CoSn3. We also observe that the consumption of Ni-63at%Co alloy is more serious than other NiCo alloys and it is due to the loose structure of IMCs. In the case of Ni-20at%Co, after 300 seconds reflowing additional needle-like phase (Ni,Cu)3Sn4 was formed right above the continuous (Ni,Co)Sn2 layer when Cu concentration overs 0.2wt% and Cu addition enhance the growth rate of (Ni,Co)Sn2. In the case of Ni-63at%Co and Co, as Cu addition and increasing of Cu concentration are performed only CoSn3 formed at the interface, but these factors restrain the growth rate of CoSn3.
    Appears in Collections:[化學工程與材料工程研究所] 博碩士論文

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