本研究以99.9%純銅為基材，採用定電流陰極電鍍法且不使用晶種層於銅基材表面成長具優選方向(0002)之氧化鋅奈米柱。在本研究中，藉由改變氯化鋅與雙氧水濃度、陰極電鍍時間等操作參數，來探討對氧化鋅奈米柱形貌與結構所造成之變化，並藉由電化學循環伏安法解析不同實驗條件對氧化鋅奈米柱之影響與其成長機制。 利用場發射電子顯微鏡(FE-SEM)與低掠角X光繞射光譜儀(GIXRD)觀察氧化鋅奈米柱的形貌與結構，研究結果顯示：其結構具有優選方向為(0002)，當氯化鋅濃度由0.5 mM增加至2.5 mM時，氧化鋅奈米柱的平均柱徑會由220 ㎚增加至約650 nm；但是當濃度持續增加至3.0 mM時，平均柱徑略微下降至600 nm。氧化鋅奈米柱的平均柱高在氯化鋅濃度為0.5 mM的條件下是1200 nm，當濃度增加至2.0 mM時，平均柱高會增長至約1800 nm；但再持續添加過量的氯化鋅會導致平均柱高降低至約400 nm。雙氧水添加量由10 mM增加至40 mM時，會使氧化鋅奈米柱平均柱徑由400 nm增大至約1200 nm陰極電鍍的時間增加，也會使氧化鋅奈米柱柱徑增加。銅基材表面的氧化鋅奈米柱化學結構，經X光光電子能譜儀(XPS)分析後為Zn-O的鍵結(鍵結能為1021.9 eV)。 The textured ZnO nanorods were prepared on a copper substrate (purity at 99.9%) by electrodeposition without seed-layer. The electrodeposition was carried out by galvanostatically 0.08 mA/cm2 in a bath prepared from fresh ZnCl2 and H2O2 solutions controlled at 82 ℃. The concentrations of ZnCl2 and H2O2 solutions were changed to investigate its effect on the morphology of the nanorods. Field-emission scanning electron microscope (FE-SEM) was used to examine the morphology of the nanorods. Grazing incident X-ray diffraction (GIXRD) was employed for determination of the crystal structure. Uniform ZnO nanorods textured on (0002) were fabricated by this technique despite the variation of the components in the bath. With increasing the concentration of ZnCl2 from 0.5 mM to 2.5 mM, the average diameter of nanorods increase from 220 nm to 650 nm but it decreases to 600 nm with increasing ZnCl2 to 3.0 mM. The average length of nanorods increase from 1200 nm to 1800 nm with increasing the concentration of ZnCl2 from 0.5 mM to 2.0 mM, but it decreases to 400 nm with further increasing concentration of ZnCl2. The average diameter of nanorods reveals a monotonic increase from 400 nm to 1200 nm with increasing the concentration of H2O2 from 10 to 40 mM. The chemical composition was Zn-O (binding energy is 1021.9 eV) which analyzed by X-ray photoelectron spectroscopy (XPS). This study provides constructive information to further understand the growth mechanism of ZnO nanorods on metal substrate.
