本論文是探討以分子束磊晶法在(001)矽基板上成長銻化銦薄膜，經由熱退火處理後，其電性與微結構的改變，並利用一多晶模型擬合以解釋其電子傳輸機制。我們利用分子束磊晶法在矽基板上成長銻化銦薄膜，觀察溫度對成長模式之影響，並藉由兩階段的成長方法改善銻化銦薄膜特性，使其能夠在極薄的厚度下得到高電子遷移率與較平整的表面形貌。在熱退火的實驗中，經由改變退火溫度與退火時間，觀察銻化銦薄膜的變化，實驗結果顯示，原生之銻化銦薄膜成長於矽基板時，係呈現多晶的結構，晶粒邊界散射機制為限制載子遷移率之主要因素，而試片經由熱退火處理後，晶粒增大，可改善電子遷移率幅度高達3倍以上。 In this research, we investigate the electrical and structural properties of ultrathin InSb films grown on Si substrate by molecular beam epitaxy. The effects of thermal annealing on the ultrathin InSb films are also examined. A polycrystalline scattering model is used to explain the transport properties of the as-grown samples and annealed samples. Growth temperature is an essential growth parameter for high quality InSb films, especially when grown on lattice mismatched Si substrates. A two-step growth method is adopted to obtain InSb films with good material quality and smooth surface. The films are subject to thermal annealing at different temperature and durations. It is found that the InSb films prepared in this work are of polycrystalline nature. Grain boundary scattering is therefore the dominant carrier scattering mechanism, which limits the electron mobility of these InSb films. After thermal annealing, the increase of grain size and reduction of grain boundary result in improved electron mobility. An optimized annealing condition, i.e. 500 oC for 5 minutes, electron mobility is increased by as much as three times.
