此研究利用電漿蝕刻機制，鍍製深紫外及透明導電薄膜。 對深紫外鍍膜，我們成功以便宜鋁靶材在室溫鍍製氟化鋁薄膜，在低濺鍍功率(30W)時並通入適當比例的O2/CF4氣體可鍍出光學性質佳且粗糙度小的氟化鋁薄膜，為了工業界的應用我們增大濺鍍功率到200W，在較佳的O2和CF4的比例下，濺鍍速率比30W大7.43倍且在波長190nm到700nm的消光係數都小於6.8×10-4，此值遠小於只通CF4的消光係數 (4.4×10-3)，此外膜質呈現非晶質結構且粗糙度只有0.8nm，所有薄膜的殘餘應力為壓應力在濺鍍功率為160W時可得到最小的壓應力0.068 GPa，我們運用此製程在鋁膜上鍍製氟化鋁薄膜成功的將193nm 波長下的反射率從88.2% 提高到91.2%， 此值大於最近發表論文的90.3% 電漿蝕刻機制也應用於透明導電膜(FTO)，實驗中以純錫靶並通入不同比例的CF4/O2氣體來改善薄膜的光學和電性質，從光譜資訊中得知此新製程可提高紫外到可見光的穿透率，當通入適當比例的CF4/O2氣體，在波長400 nm到800nm消光係數可小於1.5×10-3，而折射率在550nm只減少0.21，在較佳的鍍膜參數並在真空中以350℃退火一小時，可得電阻率1.23×10-3 Ω-cm，且平均400 nm到700nm的絕對穿透率為88.48%。 從上述的結果中可知，此新製程在鍍製深紫外和透明導電膜的薄膜品質，優於傳統熱蒸鍍和濺鍍，且此新製程有極大的潛力可應用於工業生產上。 In this research, the plasma etching mechanism has been applied to DUV and transparent conductive oxide coatings. For DUV coating, aluminum fluoride thin films have been deposited by plasma etching deposition with an aluminum target onto a room temperature substrate. For low sputtering power (30W), the best optical quality and smallest surface roughness was obtained when the AlF3 thin films were coated with O2:CF4 (12sccm:60sccm). To increase the deposition rate for industrial application, the sputtering power was increased to 200W with the best ratio of O2/CF4 gas. The results show that the deposition rate at 200W sputtering power was 7.43 times faster than that at 30W sputtering power and the extinction coefficients deposited at 200W were less than 6.8×10-4 at the wavelength range from 190nm to 700nm.To compare the deposition with only CF4 gas at 200W sputtering power, the extinction coefficient of the thin films improve from 4.4×10-3 to 6×10-4 at the wavelength of 193nm. In addition, the structure of the film deposited at 200W was amorphous-like with a surface roughness of 0.8nm. All of the residual stresses were compressive and their trends were consistent with the refractive indices. The lowest compressive stress (0.068 GPa) was obtained when the AlF3 films were prepared at 160W sputtering power. High reflective lens of aluminum with an AlF3 protective layer have been deposited by PED. The reflectance in 193nm increased from 88.2% to 91.2% and the reflectance was higher than that in recent published paper (90.3%) For transparent conductive oxide, Fluorine-doped tin oxide films have been deposited by plasma etching deposition with Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of films. The transmittance result shows that the novel deposition can raise the transmittance in the UV to visible range. The extinction coefficient decreased as the CF4 to O2 ratios increased and the extinction coefficient was lower than 1.5×10-3 in the range from 400 nm to 800nm when CF4 to O2 ratios was 0.375. The refractive index decreased as the CF4 to O2 ratios increased and the largest decreased amount at 550nm was 0.21. The resistivity of fluorine-doped SnO2 films deposited by PED after annealing at 350℃ in vacuum for one hour was 1.23×10-3 Ω-cm which was 40 times smaller than undoped SnO2 (4.55×10-2 Ω-cm) and the absolute average transmittance from 400nm to 800nm was 88.48% . All of the results indicate that this new and simple process is better than conventional thermal evaporation and sputtering when depositing DUV and TCO films and it offers excellent potential for the application of manufacture in the real-world industry.
