侷域性表面電漿效應用於蕭基二極體太陽能電池之研究; Localized Surface Plasmon on Schottky Solar Cell

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題名:	侷域性表面電漿效應用於蕭基二極體太陽能電池之研究;Localized Surface Plasmon on Schottky Solar Cell
作者:	詹勳緯;Hsun-wei Chan
貢獻者:	光電科學研究所
關鍵詞:	蕭基太陽能電池;侷域性表面電漿;Schottky Solar Cell;Localized Surface Plasmon
日期:	2010-07-22
上傳時間:	2010-12-08 14:21:20 (UTC+8)
出版者:	國立中央大學
摘要:	此篇論文基板選ITO玻璃為基板，在ITO玻璃上使用快速熱退火(RTA)燒出銀奈米顆粒再沉積非晶矽，以ITO與半導體間的異質接面製作成蕭基二極體太陽能電池(目前製作出單純蕭基接面太陽能電池效率約(0.4∼0.7％)並在接面加上銀奈米顆粒元件。表面電漿共振頻譜會因金屬奈米顆粒尺寸與形貌而有不同響應頻譜，且隨著顆粒大小增加，共振波長會有紅移現象。由角度分析頻譜儀發現圓形顆粒共振吸收，在低角度(20°∼45°)會有強吸收情況。奈橢球型或島狀奈米顆粒，對於共振吸收情形，在高角度(40°∼70°)有強吸收情形。表面電漿效應，有遠場奈米顆粒散射和近場侷限性共振模態兩種效應偶合，透過奈米顆粒的表面電漿效應，可以增加光捕捉與光聚集的情況。透過AM1.5太陽模擬器(Solar Simulator)量測奈米顆粒元件(含奈米顆粒的蕭基太陽能電池)對於光電轉換效率的影響。5nm銀薄膜RTA300℃、400℃、500℃奈米顆粒元件對於光電轉換效率(0.5％、0.7％、0.3％)有增加效果(參考片0.28％)， 10nm薄膜厚RTA300℃、400℃、500℃奈米顆粒，在相同參數有正流元件、逆流元件同時存在，透過角度解析頻譜，沒有明顯光吸收變異，確認正、逆流元件產生主因受到銀奈米顆粒造成電性上的影響。 Indium tin oxide (ITO) glass is applied as the substrate for Schottky solar cell with silver (Ag) nano-particles embedded in the depletion region. The silver nano-particles are easily fabricated through RTA annealing process. The Schottky solar cell consists of a hetero-junction between ITO and hydrogenated amorphous silicon (a-Si:H) and has conversion efficiency of 0.4~0.7% (without the Ag nano-particles). Localized surface plasmon resonates at different wavelength according to the size and shape of metallic nano-particles. With the increase of particle size, the resonance wavelength red shifts. We observe high absorption with lower incident angle of light (20°~45°) through measurement of angle-resolved spectrum when the nano-particles have shape of hemi-sphere. When the nano-particles form shape of hemi-ellipsoid or long-island, the high absorption occurs with higher incident angle of light (40°~70°). Localized surface plasmon resonance shows two effects: scattering effect in far field and localizing energy in near field; two effects can increase the light trapping and absorption in solar cells. Ag nano-particles fabricated by RTA 300°C, 400°C, and 500°C with initial Ag thin film thickness of 5nm improve the conversion efficiency of Schottky solar cells to 0.5%, 0.7%, and 0.3% while the reference cell has conversion efficiency of 0.25%. However, the conversion efficiency is not improved when the initial Ag thin film thickness is 10nm; strangely, parts of the cells with Ag particles show output power with an inverted setup in measuring J-V curve. We proposed that the conversion efficiency is dominated by electronic when the nano-particles become larg.
顯示於類別:	[光電科學研究所] 博碩士論文

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