利用角解析光電子能譜術研究銅薄膜在銀(111)基板上的成長; Epitaxial growth of thin Cu films on Ag(111) studied with ARPES

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題名:	利用角解析光電子能譜術研究銅薄膜在銀(111)基板上的成長;Epitaxial growth of thin Cu films on Ag(111) studied with ARPES
作者:	黃志豪;Chih-hao Huang
貢獻者:	物理研究所
關鍵詞:	電子動能分佈曲線;有效質量;低能電子繞射儀;角解析光電子能譜術;超高真空系統;UHV;ARPES;LEED;EDC;Effective mass
日期:	2010-07-22
上傳時間:	2010-12-08 14:23:38 (UTC+8)
出版者:	國立中央大學
摘要:	我們利用了角度解析光電子能譜術(Angle Resolved Photoemission Spectroscopy, ARPES)和低能電子繞射儀(Low Energy Electron Diffraction, LEED)，研究了銅薄膜在銀(111)基板上的成長。觀察Shockley的表面電子態，紀錄了銅薄膜在銀(111)面上，隨溫度上升的變化過程。結果顯示銅的成長符合三維的成長模式。除此之外，低溫蒸鍍的薄膜，在加熱過程中，我們觀察到約380K，Shockley表面態會有過渡的情況，隨厚度不同過渡溫度也有差異。從光電子強度分佈圖和低能電子繞射圖形(LEED pattern)的實驗結果顯示，此過渡態可能為基板Ag原子遷移到Cu島上所造成，形成類似Ag/Cu(111)-(9x9)的表面重構，這和最近STM的研究結果符合。此外，銅表面的衰變實驗結果顯示，銅薄膜表面上的(9x9)表面重構來源，為一層銀在銅薄膜上所形成。 We have studied thin epitaxial Cu films on Ag(111) with angle-resolved photoelectron spectroscopy (ARPES) and low energy electron diffraction (LEED). We have characterized the evolution of the surface morphology of Cu/Ag(111) at varied annealing temperatures by monitoring its Shockley-type surface states. Our results conclude that the growth of Cu on Ag(111) is in the three-dimensional growth mode. In addition, we observed a transition of the Shockley state at ~380 K during annealing. The transitional temperature depends on the thickness of the Cu films. The results from photoemission and LEED suggest that the transition results from that Ag diffuses onto the surface of the Cu islands, and a reconstructed surface similar to Ag/Cu(111)-(9x9) is form, which agrees with the results recently reported in STM studies. Moreover, the results from the decay of the Cu surface state experiment suggest that the origin of the (9x9) surface reconstruction results from 1ML Ag on the Cu films.
顯示於類別:	[物理研究所] 博碩士論文

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