本計畫提出設計建構一使用砷化鎵積體電路來應用於微波及毫米波雷達之系統，利用砷化鎵增強/空乏型高電子遷移率場效電晶體(Enhanced / depletion mode pHEMT)的高頻優良特性，本子計畫將建立其單閘極(single-gate)、雙閘極(dual-gate)及三閘極 (triple-gate)電晶體直流與高頻至50 GHz 等效模型，將透過完整的S 參數及負載拉移量測來探討建立電晶體主動元件直流、高頻小信號及高頻大信號模型，以及被動元件電感、電容、電阻及傳輸線的高頻等效模型，以供系統相關主/被電路與模組的模擬的需求。由於系統中的相關電路為非線性操作，為進一步準確地模擬電路特性，計畫中將針對高功率下非線性問題進行探討及改善，使得大信號模型更為完善。此外，在本計畫中並將使用增強/空乏型多閘極電晶體來規劃設計相關電路來驗證模型的準確性，包含有基本數位邏輯電路、高頻環形振盪器、雙閘極毫米波負電阻振盪器、雙閘極毫米波放大器及多閘極微波開關，期望數位邏輯電路操作速度可大於10 Gbps，環型振盪器量測振盪頻率符合模擬結果，雙閘極毫米波振盪器及雙閘極毫米波放大器電路操作頻率可達 K-band 以上，與多閘極微波開關其插入損失及反射損失皆可符合模擬預測。 A radar system applied for microwave/millimeter-wave band will be fulfilled by using the GaAs enhanced /depletion-mode pHEMT in this plan. To provide the active/passive device models with the excellent high-frequency performance for achieving the exact simulations of the relative circuit and sub-system, we will establish the single-, dual-, and triple-gate small/large signal active device models under different bias conditions and the passive models of the resistor, capacitor, and inductor up to 50 GHz through the dc, S-parameter, and load-pull measurements. The nonlinear behavior will also be discussed and improved within the active models due to the high RF power operation with some circuits. In addition, we will design the fundamental digital logic, ring-type oscillator, dual-gate millimeter-wave band negative resistance oscillator, dual-gate millimeter-wave band amplifier, and the multi-gate RF switch circuits to verify the accuracy of models. We hope that the operation speed can be up to 10 Gbps for the logic circuits, and the measured oscillation frequency of the ring-type oscillator can match the simulation results. Moreover, the operation frequency of the dual-gate circuits of the negative resistance oscillator and the amplifier will be performed up to K-band. The measured insertion and reflection losses of the multi-gate RF switch can be the same as the simulation results. 研究期間：9608 ~ 9707
