目前太陽能電池以多晶矽（multicrystalline silicon）太陽能電池為主，且生產多晶矽晶錠（ingot）諸多方法中，以單向固化法（Directional solidification）最為普遍，效率亦較高。另外為因應降低太陽能電池成本之要求，多晶矽晶錠朝向高體積、大面積、高品質來發展，如何兼顧生產品質、成本與效率實為長晶技術上一大挑戰。本研究將建立DSS法生長多晶矽晶錠熱流場數值模擬模式，探討使用該法生長大尺寸多晶矽晶錠過程中熱流場分佈之情形。由於目前DSS法生長多晶矽晶錠之坩堝外型多為非軸對稱之方形，且晶錠生長過程中晶錠-熔湯界面形狀無法觀察，故本研究運用COMSOL求解器建立3D多晶矽晶錠生長熱流場模式，來預測結晶時之熱流場及界面形狀。本研究將分析生長大型（900 公斤）多晶矽晶錠時熱流場分佈，分析不同加熱型態、不同通氣量、不同生長速度、爐體內之熱傳遞、自由表面熱張力流、雜質濃度分佈、晶錠面積高度比等，對晶錠品質之影響。本研究除了使多晶矽晶錠生長熱流場理論模式更臻完備外，並可建立國內發展大型多晶矽晶錠生長系統設備之研發能量，提供國內相關產業運用。 The photovoltaic solar cells are mainly fabricated by the multicrystalline silicon. In comparison with other growth method, the efficiency of multicrystalline silicon solar cells made by the crystal grown from the directional solidification system (DSS) is much higher. In order to meet the requirement of reducing the cost of multicrystalline silicon solar cells, themulticrystalline silicon ingot become higher volume, surface area, and quality. These are the major challenges of multicrystalline silicon ingot growth. In this study, we will establish the capability of numerical model for simulating the heat and fluid flow phenomena during the DSS multicrystalline silicon ingot growth process. We will focus the transport phenomena of growing the large size Ingot. The crucible shape of growing multicrystalline silicon ingot in DSS is square, and the interface of the solid-melt can not be observed during the growth. Therefore, the numerical simulation procedure for the multicrystalline silicon ingot growth will be developed using the COMSOL Multiphysics to predict the heat and fluid flow phenomena and the interface shape. In this study, the heat and flow phenomena during the huge (900kg) multicrystalline silicon ingot growth will be investigated. The influence of the heating type, the heat transport in the furnace, the thermalcapillary phenomena on the free surface, the concentration distribution of impurities in the melt, the ratio of area to high of the ingot, the different gas flows and the different growth velocities on the quality of the resultant ingot. From this study, the ability of developing equipments for growing the huge multicrystalline silicon ingot will be established. 研究期間：9908 ~ 10007
