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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/46990


    Title: 高效能LED關鍵光熱模組元件技術之研究---子計畫二:超低模組熱阻之LED晶片黏著(I);Extra-Low Thermal Resistance of LEDs Chip(I)
    Authors: 伍茂仁
    Contributors: 光電科學與工程學系
    Keywords: 能源工程;光電工程
    Date: 2010-01-01
    Issue Date: 2011-07-13 16:23:02 (UTC+8)
    Publisher: 行政院國家科學委員會
    Abstract: 本計畫將利用真空相變均溫板整合覆銅陶瓷基板,發展真空相變均溫路電板。除一般封裝架構外,亦可以薄膜式氮化鎵或覆晶的封裝形式,將高功率LED,以Au/Sn 為銲料利用合金接合方式進行模組封裝技術開發,在真空相變均溫路電板上發展高功率LED 晶片黏著技術,發展超低模組熱阻之LED 照明系統。藉由此計畫,矽基座薄型GaN LED 模組將與真空相變均溫板技術結合,藉由引入覆銅陶瓷基板技術,在10 × 10 × 0.5 cm3 的真空相變均溫板上,實現可承受120 W 高熱量熱源、高熱通量熱點20 W/cm2 以及系統熱阻小於0.2 K/W 之LED 照明系統。預計含散熱鰭片,整個照明系統的重量將小於2 Kg,以色溫4500 K 估算,總出光量將達到12000 lm。相信這將是最小尺寸、最輕量化之10000 lm 級LED 照明系統。 The integraion of a vapor chamber and a direct-bond-copper (DBC) board to be a DBC circuit board on vapor chamber is proposed in the project. A silicon-based submount fabricated using MEMS technology to assemble the high-power LED chip using the eutectic bonding with the Au/Sn solder is also proposed to developed thin-film GaN LED lighting module. Such a silicon-based thin-film GaN LED module would be packaged upon the DBC circuit board on vapor chamber to form an ultra-low thermal-resistance LED lighting system. By using core technologies of silicon-based thin-film GaN LED modules, DBC circuit boards, and vapor chambers in the project, a compact and light-weight LED lighting system with the optical output of 10000 lm can be demonstrated. The system features include a high power-load of 120W, a high power density of 20 W/cm2, and a low thermal resistance of 0.2 K/W under a board size of 10 × 10 × 0.5 cm3. The weight of whole system including the heat sink would be less than 2 Kg. The optical output power can be larger than 12000 lm at the color temperature of 4500 K. 研究期間:9901 ~ 9912
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[光電科學研究中心] 研究計畫

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