本計畫將利用真空相變均溫板整合覆銅陶瓷基板，發展真空相變均溫路電板。除一般封裝架構外，亦可以薄膜式氮化鎵或覆晶的封裝形式，將高功率LED，以Au/Sn 為銲料利用合金接合方式進行模組封裝技術開發，在真空相變均溫路電板上發展高功率LED 晶片黏著技術，發展超低模組熱阻之LED 照明系統。藉由此計畫，矽基座薄型GaN LED 模組將與真空相變均溫板技術結合，藉由引入覆銅陶瓷基板技術，在10 × 10 × 0.5 cm3 的真空相變均溫板上，實現可承受120 W 高熱量熱源、高熱通量熱點20 W/cm2 以及系統熱阻小於0.2 K/W 之LED 照明系統。預計含散熱鰭片，整個照明系統的重量將小於2 Kg，以色溫4500 K 估算，總出光量將達到12000 lm。相信這將是最小尺寸、最輕量化之10000 lm 級LED 照明系統。 The integraion of a vapor chamber and a direct-bond-copper (DBC) board to be a DBC circuit board on vapor chamber is proposed in the project. A silicon-based submount fabricated using MEMS technology to assemble the high-power LED chip using the eutectic bonding with the Au/Sn solder is also proposed to developed thin-film GaN LED lighting module. Such a silicon-based thin-film GaN LED module would be packaged upon the DBC circuit board on vapor chamber to form an ultra-low thermal-resistance LED lighting system. By using core technologies of silicon-based thin-film GaN LED modules, DBC circuit boards, and vapor chambers in the project, a compact and light-weight LED lighting system with the optical output of 10000 lm can be demonstrated. The system features include a high power-load of 120W, a high power density of 20 W/cm2, and a low thermal resistance of 0.2 K/W under a board size of 10 × 10 × 0.5 cm3. The weight of whole system including the heat sink would be less than 2 Kg. The optical output power can be larger than 12000 lm at the color temperature of 4500 K. 研究期間：9901 ~ 9912
