太陽電池磊晶技術開發

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/47188

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/47188

Title:	太陽電池磊晶技術開發
Authors:	綦振瀛
Contributors:	電機工程學系
Keywords:	硒化鋅;氧硒化鋅;氧化鋅;透明導電層;太陽能電池;ZnSe;ZnSeO;ZnO;transparent conductive layer;solar cell;電子電機工程類
Date:	2010-01-01
Issue Date:	2011-07-14 10:13:02 (UTC+8)
Publisher:	行政院原子能委員會
Abstract:	我們將利用電漿輔助分子束磊晶系統成長氧化鋅、硒化鋅及氧硒化鋅化合物。藉由硒化鋅直接能隙與高能隙特性，並可以加入氧後的能帶彎曲的現象，將以此材料成長於傳統三層堆疊太陽能池上，成為四層堆疊太陽能電池，可以吸收從紫外延續到紅外光的能量，並提升太陽能電池之開路電壓。且於同一成長腔體內，成長氧化鋅透明導電層於太陽能電池表面，對於提升太陽能電池的效率將具有相當大的助益。 We aim to grow ZnSe, ZnSeO alloys, and ZnO by plasma-assisted molecular beam epitaxy. Due to the direct band gap, and high band gap, band bap bowing effect, one can vary the ratio of Se and O to tune the band gap of this material and grow the material on triple-junction solar cell as the forth junction to assist the absorption from violet to infrared and increase the open-circuit voltage. The ZnO transparent conductive layer is deposited on the top of the solar cell for n-type electrode in the same growth chamber. Therefore, it might increase the efficiency of multi-junction solar cells. 研究期間：9901 ~ 9912
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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