本研究利用射頻磁控濺鍍系統沉積ZnO:Al透明導電薄膜做為晶種層，成功地以電鍍法成長出一系列長短寬度可調變之ZnO:Al 奈米柱陣列，並針對其晶體結構、表面形貌、光電性質及表面親疏水性質進行一系列的深入觀察與分析，並找出成長大面積ZnO:Al 奈米柱陣列之最佳製程參數。本研究也首度結合奈米球微影技術與電鍍製程，成功地在ZnO:Al透明導電薄膜的表面製備出大面積且尺度大小可調變碗形-蜂巢狀規則有序之ZnO:Al新穎雙奈米結構。而此種新穎ZnO:Al奈米結構陣列在400 nm - 800 nm 波長之穿透率皆可>80%，且在可見光波長範圍最高平均霧度可達27.6%，遠大於平整ZnO:Al薄膜之平均霧度 ( 約0.56 % ) ，在光捕捉效率提昇上效果十分顯著。此相關實驗結果，相信將可提供未來在太陽能光電元件製程開發及設計時之參考。 In this study, ZnO:Al ( AZO ) transparent conducting oxide thin films were deposited on glass by a RF sputtering system to serve as the seed layer for the electrodeposition of AZO nanorods. Large-area AZO nanorod arrays were prepared in the optimal electrodeposition conditions. The microstructue, surface morphology, and physical properties of the AZO nanorods have been investigated. Furthermore, bowl-like AZO nanorod structures were successfully fabricated on AZO films by using nanosphere lithography combined with the electrodeposition technique. The size and periodicity of bowl-like AZO nanorodstructures can be controlled by turning the diameter of nanosphere and the electrodeposition conditions. In the optimum conditions, the total transmittance of the bowl-like AZO nanorods sample was higher than 80 % in the wavelength ranges of 400-800 nm. In addition, the obtained bowl-like AZO nanostructures were found to be very effective in light trapping. The average HAZE of the bowl-like AZO nanorods sample in the range of 400-800 nm is 27.6 %, which is higher than that of the AZO thin films samples ( ~0.56 %) . Since the size and periodicity of bowl-like AZO nanostructures can be readily controlled by turning the diameter of nanosphere and the electrodeposition conditions, the approach presented here can be used to fabricate a variety of AZO nanostructure arrays to enhance the light trapping effects.
