| 摘要: | 隨著半導體產業因科技產品需求增加及石化危機所造成的太陽能產業蓬勃發展等大環境影響下，使得矽晶圓的使用量大增，在供需不平衡下衍生了原物料短缺之問題。因製程良率問題所造成的廢棄晶圓其價值亦水漲船高，在成本及資源再利用的相關考量下，產業對晶圓再利用的需求性與日俱增，故晶圓表面處理技術為目前急需突破的課題。而傳統的晶圓表面處理製程尚有環境性、加工性等若干問題急需解決。 本研究在環境影響、製程效率等因素考量下，選擇對於脆硬材料有較佳材料移除率的磨料噴射法為製程加工法，但因傳統磨料噴射撞擊容易因過度加工而造成表面不平整，徒增後續處理之困擾，本研究研發製備具微彈性的複合噴射磨料，利用其具有緩衝瞬間衝擊能量特性，針對磨料噴射加工法於晶圓表面異質層移除的缺點進行改善，並配合精微噴射技術，能有效改善加工過度、表面粗糙度的問題，進而降低後續製程處理成本。 研究主要分為三大部分，第一部份為複合磨料的製備及加工性探討：利用物理熱披覆的方式將加熱後之研磨磨粒均勻披覆於高分子材料球狀顆粒表面以製成新型複合磨料，實驗證明在設定溫度200℃及披覆粒徑#3000時可獲得形貌完整、披覆均勻的複合磨料，並藉由加工性測試中發現複合噴射磨料確實降低裂痕衍生的機率。第二部分則為晶圓回收處理製程：針對晶圓表面異質層處理利用實驗設計進行實驗規劃，探討各製程參數對表面粗糙度與材料移除率的影響。經實驗結果得知，較佳製程參數組合為：披覆磨料號數#3000SiC、衝擊角度30°、噴射距離70mm、噴射壓力0.4MPa及旋轉平台轉速250rpm。可於5分鐘內將晶圓表面異質層完全去除，經EDS檢測證實無其他元素殘留，且達到表面粗糙度0.118 μm Ra。由實驗證明本研究所開發的複合磨料可完全移除晶圓表面異質層且獲得較佳的表面粗糙度。第三部份則是研發磁彈性複合磨料再配合磁場輔助的牽曵吸引效果，增加磨料的材料移除效率，並提升磨料利用率，實驗結果證明利用化學共沉法製造的奈米磁性微粉能披覆在彈性複合磨料上形成磁彈性複合磨料，使其同時兼具多種材料移除機制。 As the semiconductor industry due to increased demand for technology products and petrochemical crisis caused by the solar industry is flourishing under the influence of such environment, making use of the silicon wafer significant increase in the supply and demand imbalance under the derivative of the original problem of material shortage. Due process yield problems caused by discarded wafers will also increase its value, in terms of cost and resource re-use of relevant considerations, industry demand for wafers of increasing re-use, so the wafer surface treatment technology is urgently needed to break the subject . The traditional wafer surface treatment processes are still the environment of the processing of a number of issues need to be resolved. In this study, the environmental impact, process efficiency and other factors consideration, the select the for hard-brittle materials with better material removal rate of abrasive jet machining process method , but the traditional abrasive jet impact likely caused by over-processed surface is not smooth, merely to add subsequent treatment of the problems, this study developed a micro- elasticity compound abrasive, using its instant impact with the energy characteristics of the buffer, for abrasive jet machining method to remove the wafer surface hetero layer to improve the shortcomings, and with microscopic jet technology, can effectively improve the excessive processing and the surface roughness of the problem, thus reducing the cost of subsequent treatment processes. Study is divided into three parts, the first part of the composite abrasive of the preparation and processing: the use of physical heating coated with way the abrasive particles coated on the surface of polymer materials made of spherical composite abrasive, experimental proof of the set temperature of 200 ℃ and the availability of coated particle morphology # 3000, complete uniform composite coated abrasives. The results indicate indeed found to reduce the cracks derivative. The second part is the wafer recycling process: the surface hetero layer for wafer processing using experimental of design to explore the process parameters on surface roughness and material removal rate. The experimental results revealed that the better combination of process parameters: combination is Abrasive mesh size 3000 SiC、Impact angle 30°、stand-off distance 70mm、Impact pressure 0.4 MPa and rotation platform speed 250 rpm. The wafer surface hetero layer is completely removed within 5 minutes and the EDS examination confirms that there are no other elements remained and the result also achieves the surface roughness 0.118μm Ra. The experiment proves that the compound abrasive can completely remove the hetero layer on wafer surface and obtain the better surface roughness. The third part is the development of magnetic elasticity composite abrasive with the magnetic field assisted and then attracting effect, increasing the abrasive material removal efficiency, and improve utilization of abrasive, experimental results show that the use of chemical co-precipitation method to manufacture nano-magnetic powder coated with composite abrasive to form the magnetic-elasticity composite abrasive. It also combines a variety of material removal mechanism. |
