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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/47766


    題名: 利用電沉積法製備AgInS2與?雜鎵之AgInS2薄膜光電化學特性之研究;Study on the Photoelectrochemical Properties of AgInS2 and Ga-doped AgInS2 Thin Films Prepared by Electrodeposition Method
    作者: 汪志豪;Chih-hao Wang
    貢獻者: 機械工程研究所
    關鍵詞: 銀銦鎵硫化物;薄膜;光電化學;電沉積;銀銦硫化物;Electrodeposit;Photoelectrochemistry;Thin film
    日期: 2011-10-20
    上傳時間: 2012-01-05 12:34:46 (UTC+8)
    摘要: 本研究使用一步驟新電沉積的製程方法,於氟摻雜二氧化錫 (Fluorine-doped tin oxide, FTO)導電玻璃上沉積銀-銦-硫和鎵-銀-銦-硫薄膜。首先,我們針對電沉積溶液中[Ag]/[In]莫耳比對薄膜之結構、形態和光電化學特性做研究探討。由X光繞射光譜儀 (X-ray diffractometer, XRD)分析結果顯示,薄膜皆具有AgInS2晶相結構。薄膜的厚度、直接能隙與間接能隙範圍分別為209 ~ 1021 nm、1.82 eV ~ 1.85 eV和1.44 ~ 1.51 eV之間。經Mott-Schottky分析和開路電壓量測分別得到薄膜的載子濃度及平帶電位範圍為4.2×1019 cm-3 ~ 9.5 ×1019 cm-3 之間和 -0.736 ~ -0.946 V (vs. Normal hydrogen electrode, NHE)。研究結果發現,電沉積溶液之[Ag]/[In]莫耳比等於0.8時,於含有K2SO3 (0.25 M)和Na2S (0.35 M)之水溶液中,施加偏壓+1.0 V (vs. Ag/AgCl electrode)下可得到最大的光電流值為9.28 mAcm-2。此研究結果表示,利用電沉積法可將AgInS2沉積於FTO導電玻璃上,並可應用於光電化學系統中。 再者,我們亦針對電沉積溶液中[Ga]/[In]莫耳比對Ga-doped AgInS2 ([Ag]/[In]莫耳比為0.8)薄膜之結構、形態和光電化學特性做研究探討。由薄膜的XRD結果發現,當增加電沉積溶液中[Ga]/[In]之莫耳比時,其試片之XRD會朝向高角度偏移。薄膜的厚度、直接能隙與間接能隙範圍分別為580 ~ 643 nm、1.84 eV ~ 1.93 eV和1.42 ~ 1.59 eV之間。經Mott-Schottky分析和開路電壓量測得到薄膜的平帶電位範圍別為-0.76 ~ -0.99 V (vs. NHE)。電沉積溶液[Ga]/[In]莫耳比等於0.03時,於K2SO3 (0.25 M)和Na2S (0.35 M) 水溶液中,施加偏壓+1.0 V (vs. Ag/AgCl electrode)時,可得到最大的光電流值為10.37 ± 0.13 mAcm-2。 Silver-indium-disulfide (AgInS2) and Gallium-doped silver-indium-disulfide (Ga-doped AgInS2) thin films have been prepared on the fluorine-doped tin oxide (FTO) coated glass substrates using a one-step electrodeposition method. A new procedure for the deposition of AgInS2 and Ga-doped AgInS2 thin films is reported. The effect of the [Ag]/[In] molar ratio in solution bath on the structural, morphological, and photoelectrochemical properties of AgInS2 films was examined. X-ray diffraction patterns of films show that the films are the polycrystalline AgInS2 phase. The thicknesses, direct band gaps, and indirect band gaps of the films were in the ranges of 209 to 1021 nm, 1.82 eV to 1.85 eV, and 1.44 to 1.51 eV, respectively. The carrier densities and flat-band potentials of films obtained from Mott-Schottky and open-circuit potential measurements were in the ranges of 4.2×1019 cm-3 ~ 9.5 ×1019 cm-3 and -0.736 ~ -0.946 V vs. normal hydrogen electrode (NHE), respectively. It was found that the films with molar ratio of [Ag]/[In] = 0.8 in solution bath had a maximum photocurrent density of 9.28 mAcm-2 with an applied bias of + 1.0 V vs. Ag/AgCl electrode in contact with electrolyte containing 0.25 M K2SO3 and 0.35 M Na2S. The results show that high quality AgInS2 films can be deposited on FTO-coated glass substrates for photoelectrochemical (PEC) applications. Furthermore, the effect of the [Ga]/[In] molar ratio in the solution bath on the structure, morphology, and photoelectrochemical (PEC) properties of Ga-doped AgInS2 ([Ag]/[In]=0.8) films is also reported. X-ray diffraction (XRD) patterns of films reveal that the peaks of samples shifted to higher angles with increasing [Ga]/[In] ratio in the solution bath. The thickness, direct band gap, and indirect band gap of the samples were in the ranges of 643 to 580 nm, 1.84 eV to 1.93 eV, and 1.42 to 1.59 eV, respectively. The flat-band potentials of the films were in the range of -0.76 to -0.99 V vs. normal hydrogen electrode (NHE), as obtained using Mott-Schottky plots and open-circuit potential (OCP) measurements of samples. The maximum photoenhancement current density of 10.37 ± 0.13 mAcm-2 was obtained for Ga-doped AgInS2 films with a precursor ratio of [Ga]/[In] = 0.03 at an applied bias of +1.0 V vs. Ag/AgCl electrode in K2SO3 (0.25 M) and Na2S (0.35 M) aqueous solution.
    顯示於類別:[機械工程研究所] 博碩士論文

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