本研究延續實驗室之併環噻吩開發，製備出具有高穩定性有機半 導體材料 (1)?(10)；引入長碳鏈與拉電子基於併環噻吩主體，開發出可溶性 n-type 的有機化合物 (1)、(5)、(6)；延伸共軛並引入拉電子基製備 n-type 有機化合物 (2)、(3)、(4)、(7)。同時亦開發出 p-type的不對稱三併環噻吩有機化合物 (8)、(9)，以及對稱性的三併環噻吩有機化合物 (10)。目前，有機化合物 (5) 與有機化合物 (6) 以溶液製程製成元件，已得不錯的 n 型電性表現，載子移動率高達 0.08 與0.15 cm2/Vs；有機化合物 (2)、(3)、(4) 則以真空蒸鍍的方式製成元件，經過測量後，皆為 n-type 電性表現，其中有機化合物 (2)、(4) 電性分別可達 0.33、0.37 cm2/Vs 以上；有機化合物 (8)、(9)、(10) 製成 SCFET 元件，所測得電性分別為 0.23 cm2/Vs、7.28×10-3 cm2/Vs和 0.049 cm2/Vs。而其他有機化合物仍待測中。 This article focuses on the development of highly stable materials for organic semiconductors. Three soluble compounds (1), (3), and (6) were synthesized. Extension of π-π conjugation and introduction of electron withdrawing group to the fused thiophene core, n-type compounds (2), (3), (4), and (7) were developed. Asymmetric fused thiophene compounds (8) and (9) as well as a symmetric compound (10) were also prepared.The OTFT devices are fabricated by two groups:Tobin J. Marks group at Northwestern University (vacuum deposition) and Industrial Technology Research Institute (solution process).Compounds (2) and (4) exhibit n-channel mobility of 0.33 and 0.37 cm2/Vs with vacuum deposition, respectively. Compounds (5) and (6) exhibit n-channel mobility of 0.08 and 0.15 cm2/Vs via solution process. Compounds (8), (9), and (10) show p-channel mobility of 0.23 cm2/Vs,7.28×10-3 cm2/Vs as well as 0.049 cm2/Vs。
