在本論文中，我們利用非晶矽及二氧化矽(Si/SiO2)、氮化矽及二氧化矽(Si3N4/SiO2)以週期性排列的方式組成一個高反射之布拉格反射鏡，再利用此高反射鏡以包覆空氣的方式形成中空光波導。在設計過程中，我們將會利用色散曲線與傳遞矩陣分析此反射鏡之特性。在設計完中空光波導之後，我們設計了兩種中空光波導元件，分別為中空轉角光波導及中空濾波光波導。在中空轉角光波導元件中，我們設計了兩種不同類形之轉角器，分別為截角式及弧形式轉角波導，並用有限時域差分法計算及分析此轉角光波導之傳導性，最後再利用半導體製程的方式製作出中空轉角光波導元件並量測及分析其結果，其中空弧型轉角波導最小之轉角損耗為：BLEy=3.5 Db、BLHy=6.4 dB；截角式轉角光波導的最小之轉角損耗為：BLEy=1.0 dB、BLHy=0.8 dB，由此可知截角式之轉角器有較低之轉角損耗，並且有較小元件尺寸之特性。而在中空濾波光波導元件中，我們在非晶矽及二氧化矽所組成之布拉格反射鏡中插入一個矽缺陷，使此高反射鏡之反射光譜中產生一個缺陷態，而此缺陷態所產生之濾波波長可由缺陷層之厚度改變，我們可利用傳遞矩陣計算出此特性。在設計完此元件後，我們利用半導體製程的方式製作出中空濾波光波導元件並量測及分析此元件，此元件可有效的將波導內特定波長的光濾除，且有窄的濾波頻寬之特性。 In this thesis, the hollow waveguide devices are composed of Bragg reflector mirrors which constituted by the amorphous silicon (a-Si) and silicon dioxide (SiO2) or silicon nitride (Si3N4) and silicon dioxide (SiO2). The Bloch theorem and transfer matrix are used to simulate the dispersion relation (or band structure) of Bragg reflectors which constitute the hollow waveguide devices. In 90o bent waveguides device, two types of 90o bent hollow waveguide (arc-type and cut-type) are presented theoretically and experimentally. We used the two-dimensional finite-difference time-domain method to simulate bending transmission efficiencies for arc- and cut-type 90o bent waveguides. The lowest 90 degree bending losses are around BLEy=3.5 dB、BLHy=6.4 dB for the arc-type bending waveguides and BLEy=1.0 dB、BLHy=0.8 dB for cut-type bending waveguides, respectively. This waveguide demonstrates a possibility for higher density of integration in planar light wave circuits. In filter waveguide device, this thesis describes a theoretical and experimental study of wavelength-selective filter derived from hollow optical waveguides which composed of Bragg reflectors, constituted by the a-Si and SiO2, with a-Si defect layers on silicon substrate. The defect states of transmission filter can be tuned with the different thicknesses of defect layer. The device exhibited the narrow bandwidth of 0.5 and 1.1 nm for wavelengths of 1571 and 1519 nm, respectively.
