利用電子迴旋共振化學氣相沉積法成長摻雜硼與磷微晶矽之研究; The Study for boron and phosphorus doped microcrystalline silicon using electron cyclotron resonance chemical vapor deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/48154

Title:	利用電子迴旋共振化學氣相沉積法成長摻雜硼與磷微晶矽之研究;The Study for boron and phosphorus doped microcrystalline silicon using electron cyclotron resonance chemical vapor deposition
Authors:	連崇閔;Chung-min Lien
Contributors:	光電科學研究所
Keywords:	電子迴旋共振化學氣相沉積;硼摻雜;磷摻雜;Phosphorus doped;Boron doped;ECR-CVD
Date:	2011-07-27
Issue Date:	2012-01-05 14:35:45 (UTC+8)
Abstract:	本篇論文是利用電子迴旋共振化學氣相沉積法electron cyclotron resonance-chemical vapor deposition (ECR-CVD)來成長矽薄膜太陽能電池，主要在探討p、n摻雜層在不同條件下所成長出的薄膜特性與不同條件的p摻雜層對於太陽能電池的影響。　ECR-CVD是利用微波激發使腔體內部的氣體解離，屬於高密度電漿化學沉積，優點除了高密度電漿外，還有較低的離子溫度、較快的鍍率、較低的離子轟擊、較低的工作壓力等。藉由利用不同的氫氣稀釋濃度、工作壓力、摻雜氣體濃度、微波功率或氬氣混合濃度，可以達到不同特性的p、n薄膜。　利用ECR-CVD能夠成長高摻雜的硼與磷摻雜微晶矽，雜質摻雜濃度能控制在19到20次方以上，厚度在100nm上下時能控制結晶率到35%，而載子移動率也能利用較低的摻雜氣體流量來改善，能將載子移動率從0.1 (cm2/ V-s)提升至 1.2(cm2/ V-s)。　利用沉積摻雜濃度為2.3E19、載子移動率為1.25 (cm2/ V-s)之p層與摻雜濃度為6.71E19、載子移動率為0.884(cm2/ V-s)之n型來成長非晶矽薄膜太陽能電池可達到1.4%效率、4( mA)電流密度、0.8(V)與42%填充因子。　This paper is focused on growing p and n-doped thin-film silicon solar cells by electron cyclotron resonance chemical vapor deposition electron cyclotron resonance-chemical vapor deposition (ECR-CVD). The characteristics of doped layers and growing conditions are discussed in this study. 　The ECR-CVD is use of microwave excited gas dissociation to produce high-density plasma. The advantage of ECR-CVD are high plasma density, low ion temperature, the faster deposition rate, low ion bombardment, low operating pressure. By using different hydrogen dilution ratio, working pressure, dopant gas concentration, microwave power or concentration of argon gas mixture can grow different characteristics p, n film. 　Using ECR-CVD to grow highly boron and phosphorus doped microcrystalline silicon can able to control the concentration 19 to 20 order,The crystallization rate can be controlled to 35% when the thickness of thin film silicon is limited to 100nm, while the mobility can be improved by doping with lower gas flow.The mobility can from 0.1 (cm2 / Vs) raised to 1.2 (cm2 / Vs). Growth of amorphous silicon solar cells can be used as the doping concentration 2.3E19, carrier mobility was 1.25 (cm2 / Vs) of the p layer and the doping concentration of 6.71E19, carrier mobility was 0.884 (cm2 / Vs) of the n layer. The efficiency can reach 1.4%, 4 (mA) current density, 0.8 (V) and 42% fill factor.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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