三維撞擊游離模型之開發與其在球PN接面崩潰模擬之應用; Development of 3D impact-ionization model and its applications to breakdown simulation of spherical PN junction.

NCUIR > College of Electrical Engineering & Computer Science > Executive Master of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/48547

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/48547

Title:	三維撞擊游離模型之開發與其在球PN接面崩潰模擬之應用;Development of 3D impact-ionization model and its applications to breakdown simulation of spherical PN junction.
Authors:	白佳宏;Chia-hung Pai
Contributors:	電機工程研究所碩士在職專班
Keywords:	三維元件模擬器;帶寬的原理;雪崩崩潰;Band-Width property;breakdown phenomenon;3-D device simulator
Date:	2011-07-05
Issue Date:	2012-01-05 14:57:36 (UTC+8)
Abstract:	本篇論文中，我們藉由加入離子衝撞游離模型於三維元件模擬器內，來模擬半導體元件內部載子雪崩崩潰之現象。首先我們利用Poisson’s equation 和電子與電洞的連續性方程式，模擬三維半導體元件的載子產生與復合特性。接著我們再討論整體三維模擬器的程式流程還有帶寬(BW)的原理。再者為了實現三維模擬器讓時間更有效率，敘述如何選擇整體參數設定，緊接著討論三維在二維上的驗證。最後再顯示出三維模擬器的崩潰結果。確定無誤後，接著我們繼續探討不同擴散半徑對於崩潰電壓的影響。 In this thesis, we design a 3-D device simulator which includes the impact-ionization model to simulate the breakdown phenomenon of avalanche. First, we use Poisson’s equation, electron continuity equation and hole continuity equation to simulate 3-D device recombination rate and generation rate, and then we discuss the theorems, which include 3-D device simulator program flow chart and Band-Width property. In order to optimize efficiency in 3-D device simulation, we describe how to choose simulation parameters. After that, we discuss to prove 3-D device on 2-D stage. Finally, show the breakdown result of 3-D device simulator. After confirmation, we discuss the breakdown voltage effect on different diffusion radii.
Appears in Collections:	[Executive Master of Electrical Engineering] Electronic Thesis & Dissertation

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