本計畫將運用微機電技術，發展具Cu thermal via之矽基座，並將vertical thin-GaN LED製作在具Cu thermal via之矽基座上。thin-GaN LED磊晶層與具Cu thermal via之矽基座的鍵結將使用Au/Sn為軟銲材料之共晶接合(eutectic assembly)方式進行，所製作之高功率LED晶圓級封裝晶片，預期將具有超低熱阻之表現。藉由此計畫，將具Cu thermal via矽基座之thin-GaN LED晶片，模組在10× 10 cm2的二階散熱基板上，實現可承受120 W高熱量熱源、高熱通量熱點20 W/cm2接合介面熱阻將低於1 ℃/W之LED照明系統。預計含散熱鰭片，整個照明系統的重量將小於2 kg，總出光量將達到12000 lm。相信這將是最小尺寸、最輕量化之10000 lm 級LED 照明系統。 Fabrication of a silicon-based submount substrate with Cu thermal via is proposed in this project. Using eutectic Au/Sn bonding process as a thermal interface material (TIM) technology to assembly the high-power LED chip with the Si submount substrate is also proposed. With such a silicon-based submount with Cu thermal via, the heat generation from the thin-GaN LED chip module would be dissipated in a high efficient rate. The integraion of the silicon-based submount with Cu thermal via and Au/Sn eutectic bonding would form a ultra-low thermal-resistance LED lighting packaging system. A compact and light-weight LED lighting package system with the optical output of 10000 lm can be demonstrated. The system features include a high power-load of 120W, a high power density of 20 W/cm2, and a low thermal resistance of 1 ℃/W under a board size of 10 × 10 cm2. The weight of whole system including the heat sink would be less than 2 kg. The optical output power can be larger than 12000 lm at the color temperature of 4500 K. 研究期間：10001 ~ 10012
