VHF與ECR/ICP混成電漿成膜機制模擬分析與探討;Mechanism, Simulation, Analysis and Investigation on Vhf and Ecr/Icp Hybrid Plasma Deposition

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題名:	VHF與ECR/ICP混成電漿成膜機制模擬分析與探討;Mechanism, Simulation, Analysis and Investigation on Vhf and Ecr/Icp Hybrid Plasma Deposition
作者:	利定東;李泉
貢獻者:	機械工程學系
關鍵詞:	Hetero-Junction With Intrinsic Thin Layer (HIT);Si based solar cell;Langmuir probe;Optical Emission Spectroscopy(OES);Plasma simulation;研究領域：環保工程
日期:	2011-01-01
上傳時間:	2012-01-17 17:51:04 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	除多接面(multi-junction)矽薄膜太陽能電池，日本三洋(SANYO) 結合Floating Zone n-型矽晶圓及矽薄膜技術，成功開發異質接面薄本質層太陽能電池結構(Hetero-junction with Intrinsic Thin Layer ,HIT)，其光電轉換效率與熱穩定性皆十分優異，儼然成為此世代能源危機的最佳解之一。本研究計畫將採用40.68 MHz 之VHF-PECVD 以及ECRCVD/ICP 之沉膜製程設備進行H.I.T.矽基薄膜之研究，搭配自製蘭牟爾探針(Langmuir probe)電漿量測系統與電漿放射光譜儀(Optical Emission Spectroscopy, OES)量測反應過程中之定量、定性資訊，將電漿量測資料導入數值分析粒子模擬法 (Particle-in-Cell,PIC)進行計算模擬，嘗試建立VHF-PECVD 及ECRCVD/ICP 混成電漿源薄膜沉積之機制理論並釐清各式工作參數作用的影響，解析不同電漿源間交互作用及其對於沉膜品質影響的關連性，本研究導入數值電漿模擬運算，有助於降低實驗成本與反覆調整參數的工作時間，然為確認電漿模型的可靠性與擬真性，本研究最後將以製程驗證模擬結果。本團隊預計以VHF-PECVD 及ECRCVD/ICP 混成ion source 設備為標的，進行混成電漿沉膜機制與矽基薄膜之研究，由於薄膜性質深受電漿氣相反應中所提供之反應物種及濃度之影響，因此本團隊規劃先藉由電漿診斷技術來探討電漿中各反應物種濃度之變化與電漿源內部的電性狀態，並將數據導入，輔助建立電漿模型進行數值運算；本研究若能順利完成，即可得知薄膜的均勻性、沉膜速率與電漿內部資訊分布之關連，並解析VHF-PECVD 與ECRCVD/ICP 之所以有其大尺寸高穩定性與快速成績等特性的運作機制，對於未來製程設備的電漿源參數控制、提高薄膜太陽電池效率、產能並降低成本等方面皆有莫大助益。建立創新之低成本高效率HIT 太陽能電池，帶動國內太陽能產業之製程技術升級，並達到真正的產業量產需求。 Aside from multi-junction silicon based solar cell, Sanyo combined a floating Zone n-type silicon wafer with a silicon thin film technology and successfully developed a solar cell with a structure of Hetero-junction with Intrinsic Thin Layer (HIT). Its solar cell showed very stable with high cell efficiency and became one of the best solutions for solar energy in the era. This project will utilize process equipment with a 40 MHz VHF-PECVD chamber and an ECRCVD/ICP hybrid chamber to carry out HIT thin film study in conjunction with homemade Langmuir probes plus an Optical Emission Spectroscopy (OES) for plasma reaction mechanism in qualitative and quantitative measurements. In the meantime, based on the obtained data from Langmuir probes and OES, a data analysis for particle-in–cell, PIC will be adopted for computing plasma simulation. The results will be used to establish a VHF-PECVD and ECRCVD/ICP hybrid plasma sources for thin film deposition. The process interaction parameters are used for plasma reaction mechanism study. Furthermore, this plasma model accuracy established will be based on the results from process and its verification. Finally, from this study, we can obtain the relationship between interaction of plasma sources and the quality of the thin films. We will use VHF-PECVD and ECRCVD/ICP equipment ion source as a hybrid ion plasma source for plasma deposition mechanism and its thin film study. Due to the property of the thin films is impacted deeply by plasma reaction species and concentration; we need to utilize the plasma diagnostic technique to examine the changes for reaction species concentration within the plasma and electronic status for internal plasma sources. By conducting the operation and computing from the obtained data, we will establish a plasma model. Eventually, we will obtain the uniformity of the thin film, deposition rate and relation within internal plasma information. Moreover, we should be able to resolve the characteristics of reaction mechanism for the film stability and the high deposition rate of the film in a large size of VHF-PECVD and ECRCVD/ICP system. It will be very beneficial for the future systems in plasma parameter control, solar cell efficiency increase and cost down. By establishing such an innovative low cost and high efficiency HIT solar, it will establish our domestic solar cell industry, process technology upgraded and truly in a high volume manufacturing. 研究期間：10001 ~ 10012
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
顯示於類別:	[機械工程學系] 研究計畫

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