砷化銦鎵量子點、鍺量子點及氧硒化鋅 (ZnSe1-xOx)合金半導體都是光電元件應用的重要材料，本計畫擬研究這些材料的光輻射特性，在砷化銦鎵量子點方面，我們將探討量子點在準-L2 光子晶體共振腔的光福射及利用AFM 探針氧化光子晶體的技術發展。在鍺量子點方面，我們將探討增強量子點直接發光的方法。在ZnSe1-xOx 合金方面，我們將研究能隙收縮的物理機制。本計畫將以光譜技術來研究材料發光特性，這些技術將包含：微螢光及時間解析微螢光光譜、HBT 干涉、Michelson 干涉及光子調制光譜。光譜實驗結果將與理論分析互相印證。 The InGaAs quantum dots, Ge quantum dots and the ZnSe1-xOx alloy films are materials which are important for photonic device applications. In this project, we propose to study the photon emission properties of these materials. For the InGaAs quantum dot system, we focus on the laser properties of quantum dots embedded in q-L2 photonic crystal nanocavity; and the development of the AFM oxidization technique on the photonic crystal nanocavity. For the Ge quantum dot, the enhancement of quantum dot direct emission will be investigated. In the ZnSe1-xOx alloy films, we will study the mechanism of energy band gap reduction. Spectral characteristics of these materials will be performed using the micro-photoluminescence and time-resolved photoluminescence, HBT interferometer, Michelson interferometer, and the photoreflectance. Experimental results will be compared with the theories. 研究期間：10008 ~ 10107
